Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy
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چکیده
Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance, x-ray diffraction, and transmission electron microscopy. The first microwave performance ( f t544 GHz, fmax565 GHz! of an InGaP/GaAs heterojunction bipolar transistor grown by solid-phosphorus source is reported. © 1995 American Vacuum Society.
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تاریخ انتشار 1995